Active matrix type display device and method of manufacturing the same

ABSTRACT

A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provided on the first substrate via an adhesion layer, and having projections and depressions on a surface thereof opposing to the first substrate, the projections and depressions having rounded tips and bottoms; active elements provided on the thin glass layer, each active element corresponding to a pixel; a display provided above the thin glass layer, and driven by the active elements to display an image pixel by pixel; and a second substrate provided on the display, and having an opposing electrode formed thereon.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2002-142373, filed on May 17,2002 in Japan, the entire contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active matrix type display deviceand a method of manufacturing the same.

2. Related Art

In an active matrix type display device, which is widely used atpresent, a highly heat-resistant substrate, e.g., a non-alkali glasssubstrate, is used as a substrate on which devices are formed during anactive element forming process, and the highly heat-resistant substrateis continuously used as a supporting substrate of the display device.

When a thin film transistor is formed by using a polycrystalline siliconlayer as a semiconductor layer in which a channel region is formed, thefollowing procedure is employed, taking into consideration theprocessing temperature etc. at the time of forming each functional film.

First, a barrier layer is formed on a device forming substrate ofnon-alkali glass so that the minor constituent of the glass does notseep therefrom. Then, an amorphous silicon layer is formed thereon.Subsequently, a short-time local heat treatment using an eximer laser isperformed on the workpiece so that the amorphous silicon layer becomes apolycrystalline silicon layer through the solid phase or liquid phasegrowth. Thereafter, the thus obtained polycrystalline silicon layer isshaped. Subsequently, a thin film to serve as a gate insulating film isdeposited, and then a metal layer, on which a gate electrode and a gatewiring are formed, is formed and shaped. Furthermore, an ionimplantation is performed using the gate electrode as a mask through theion doping method in order to form a source and drain regions in thepolycrystalline silicon layer. Then, a thermal processing is performedto activate ions. Accordingly, a channel region and a source and drainregions are formed in the polycrystalline silicon layer. Subsequently,an interlayer dielectric film is formed to isolate the signal lines etc.and the gate lines, and then contact holes to the source and drainregions are formed. Then, a metal layer is formed and shaped to make asource and drain electrodes, to form a thin film transistor and wirings.When an active matrix type liquid crystal display device is formed, thedevice forming substrate, on which the active elements are formed, iscontinuously used as a supporting substrate.

When a display device having a curved display surface should bemanufactured, a light and flexible substrate, such as a plasticsubstrate, is used as a supporting substrate. Such a light and flexiblesubstrate is preferable as a supporting substrate of a display deviceused in a mobile information terminal. However, since such a plasticsubstrate does not have a sufficient heat-resistance or a sufficientdimensional stability, it is not possible to use such a plasticsubstrate as a device forming substrate on which active elements ofpolycrystalline silicon, which are superior in switching properties, areformed, and to continuously use the plastic substrate as a supportingsubstrate. Accordingly, a method is employed, in which active elementsare formed on a device forming substrate of glass, etc., which is highlyresistant to a high temperature process, and then the active elementsare transferred to a light and flexible supporting substrate formed of,e.g., a plastic. More specifically, active elements are formed on adevice forming substrate of glass, the side on which the active elementsare formed is bonded to a temporary substrate. Then, the device formingsubstrate is removed by the etching, etc., and the active elements aretransferred to a final supporting substrate.

In the above-described method, however, the process of forming activeelements and their wirings on a device forming substrate, which issuperior in heat resistance, and then transferring them to, e.g., aplastic substrate, has a problem in the way of removing the deviceforming substrate used to form the active elements.

For example, in the case where the device forming substrate used to formthe active elements should be completely removed, it is difficult toetch the device forming substrate without damaging the active elementson the device forming substrate.

With respect to the case where it is not necessary to completely removethe device forming substrate used to form the active elements, thepresent inventors have developed a display device in which the thicknessof a supporting substrate of glass, on which active elements are formed,is reduced, and then the glass substrate is bonded to a flexible sheetvia an adhesion layer (for example, see Japanese Patent Application No.2002-84924). In this display device, if the flexible sheet is bent toform a curved display, it may be possible that the glass substratebreaks. Therefore, this display device is not reliable when used in acurved application.

As described above, it has been difficult to obtain a reliable andflexible display device without damaging the active matrix devices byfirst forming active matrix devices and their wirings on a highlyheat-resistant device forming substrate, and then transferring them to aflexible plastic substrate.

SUMMARY OF THE INVENTION

An active matrix type display device according to a first aspect of thepresent invention includes: a first substrate, which is flexible; a thinglass layer provided on the first substrate via an adhesion layer, andhaving projections and depressions on a surface thereof opposing to thefirst substrate, the projections and depressions having rounded tips andbottoms; active elements provided on the thin glass layer, each activeelement corresponding to a pixel; a display provided above the thinglass layer, and driven by the active elements to display an image pixelby pixel; and a second substrate provided on the display, and having anopposing electrode formed thereon.

An active matrix type display device according to a second aspect of thepresent invention includes: a first substrate, which is flexible; a thinglass layer provided on the first substrate via an adhesion layer;active elements provided on the thin glass layer, each active elementcorresponding to a pixel; a display provided above the thin glass layer,and driven by the active elements to display an image pixel by pixel;and a second substrate provided on the display, and having an opposingelectrode formed thereon, a thickness of the thin glass layer in regionscorresponding to the active elements being thicker than a thickness ofother regions.

An active matrix type display device according to a third aspect of thepresent invention includes: a first substrate, which is flexible; a thinglass layer provided on the first substrate via an adhesion layer; acompressive stress applying layer provided between the adhesion layerand the thin glass layer, the compressive stress applying layer applyinga compressive stress to a surface of the thin glass layer at a side ofthe adhesion layer; active elements provided on the thin glass layer,each active element corresponding to a pixel; a display provided abovethe thin glass layer, and driven by the active elements to display animage pixel by pixel; and a second substrate provided on the display,and having an opposing electrode formed thereon.

An active matrix type display device according to a fourth aspect of thepresent invention includes: a first substrate, which is flexible; a thinglass layer provided on the first substrate via an adhesion layer; ahydroxyl group blocking layer provided between the adhesion layer andthe thin glass layer, and blocking a soakage of a hydroxyl group; activeelements provided on the thin glass layer, each active elementcorresponding to a pixel; a display provided above the thin glass layer,and driven by the active elements to display an image pixel by pixel;and a opposing substrate provided on the display.

An active matrix type display device according to a fifth aspect of thepresent invention includes: a first substrate, which is flexible; a thinglass layer provided on the first substrate via an adhesion layer;active elements provided on the thin glass layer, each active elementcorresponding to a pixel; a display provided above the thin glass layer,and driven by the active elements to display an image pixel by pixel; asecond substrate provided on the display, and having an opposingelectrode formed thereon; and a reinforcing member having a meshstructure, provided in the adhesion layer.

A method of manufacturing an active matrix type display device accordingto a sixth aspect of the present invention includes: forming activeelements each corresponding to a pixel on a device forming substrate ofglass; polishing the device forming substrate to make it thinner byfirst performing a mechanical polishing, and then performing a chemicalpolishing; bonding a surface of the device forming substrate, which hasbeen polished, to a plastic substrate via an adhesion layer; and forminga display driven by the active elements to display an image pixel bypixel, by placing a counter substrate so as to oppose to the deviceforming substrate.

A method of manufacturing an active matrix type display device accordingto a seventh aspect of the present invention includes: forming activeelements each corresponding to a pixel on a device forming substrate ofglass; polishing the device forming substrate to make it thinner;forming a compressive stress applying layer on a polished surface of thedevice forming substrate, a coefficient of linear expansion of thecompressive stress applying layer being larger than a coefficient oflinear expansion of the device forming substrate, and then cooling thecompressive stress applying layer; bonding a plastic substrate to asurface of the device forming layer, on which the compressive stressapplying layer is formed; and forming a display driven by the activeelements to display an image pixel by pixel, by placing a countersubstrate so as to oppose to the device forming substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B show an active matrix type display device according tothe first embodiment of the present invention, of which FIG. 1A is aplan view and FIG. 1B is a sectional view taken on line A–A′ of FIG. 1A.

FIG. 2 is a sectional view showing a step of a method of forming anactive element of the active matrix type display device according to thefirst embodiment of the present invention.

FIG. 3 is a sectional view showing a step of the method of forming anactive element of the active matrix type display device according to thefirst embodiment of the present invention.

FIG. 4 is a sectional view showing a step of the method of forming anactive element of the active matrix type display device according to thefirst embodiment of the present invention.

FIG. 5 is a sectional view showing a step of the method of forming anactive element of the active matrix type display device according to thefirst embodiment of the present invention.

FIG. 6 is a sectional view showing a step of the method of forming anactive element of the active matrix type display device according to thefirst embodiment of the present invention.

FIG. 7 is a sectional view showing a step of a method of transferringthe active element of the active matrix type display device according tothe first embodiment of the present invention.

FIG. 8 is a sectional view showing a step of the method of transferringthe active element of the active matrix type display device according tothe first embodiment of the present invention.

FIG. 9 is a sectional view showing a step of the method of transferringthe active element of the active matrix type display device according tothe first embodiment of the present invention.

FIG. 10 is a sectional view showing a step of the method of transferringthe active element of the active matrix type display device according tothe first embodiment of the present invention.

FIG. 11 is a sectional view schematically showing a thin glass layerafter being subjected to a mechanical polishing step.

FIG. 12 is a sectional view schematically showing a thin glass layerafter being subjected to a chemical polishing step performed after amechanical polishing step.

FIG. 13 is a sectional view showing a thin glass layer with some cracksleft, which is obtained by performing a mechanical polishing on a glasssubstrate.

FIG. 14 is a sectional view showing a thin glass layer with some cracksleft, which is obtained by performing a mechanical polishing on a glasssubstrate.

FIG. 15 is a sectional view showing a thin glass layer with some cracksleft, which is obtained by performing a mechanical polishing on a glasssubstrate.

FIG. 16 is a sectional view for explaining stress relaxation due to theprojections and depressions of a thin glass layer.

FIG. 17 is a sectional view for explaining stress relaxation due to theprojections and depressions of a thin glass layer.

FIG. 18 is a sectional view for explaining stress relaxation due to theprojections and depressions of a thin glass layer.

FIG. 19 is a sectional view showing an active matrix display deviceaccording to the second embodiment of the present invention.

FIG. 20 is a sectional view showing a step of a method of manufacturingthe active matrix type display device according to the second embodimentof the present invention.

FIG. 21 is a sectional view showing a step of the method ofmanufacturing the active matrix type display device according to thesecond embodiment of the present invention.

FIG. 22 is a sectional view showing a step of the method ofmanufacturing the active matrix type display device according to thesecond embodiment of the present invention.

FIG. 23 is a sectional view showing a step of the method ofmanufacturing the active matrix type display device according to thesecond embodiment of the present invention.

FIG. 24 is a sectional view showing an active matrix type display deviceaccording to the third embodiment of the present invention.

FIG. 25 is a sectional view for explaining the status of stress appliedto a normal glass substrate.

FIG. 26 is a sectional view for explaining the status of stress appliedto a thin glass layer obtained by reducing the thickness of a normalglass substrate.

FIG. 27 is a sectional view showing a step of a method of manufacturingthe active matrix type display device according to the third embodimentof the present invention.

FIG. 28 is a sectional view showing a step of the method ofmanufacturing the active matrix type display device according to thethird embodiment of the present invention.

FIG. 29 is a sectional view showing a step of a method of manufacturingthe active matrix type display device according to the third embodimentof the present invention.

FIG. 30 is a sectional view showing an active matrix type display deviceaccording to the fourth embodiment of the present invention.

FIG. 31 shows a chemical formula of a silane coupling agent.

FIG. 32 is a sectional view showing an active matrix type display deviceaccording to the fifth embodiment of the present invention.

DESCRIPTION OF THE EMBODIMENTS

Embodiments of the present invention are intended to give a flexibilityand a strength to an active matrix type display device obtained by firstforming active elements on a glass substrate serving as a device formingsubstrate, then making the glass substrate thinner, and then bonding theglass substrate to a flexible supporting substrate, which can be bent,such as a plastic substrate, via an adhesion layer.

The mechanical properties of a glass substrate with a thickness of asthin as a few tens of □m (thin glass layer) are not away from themechanical properties of glass. The softness and the flexural strengthof the glass are dependent on the Griffith's crack theory relating tothe brittle fractures caused by cracks existing in the surface area. Ifthere are cracks, the physical property value of, e.g., the flexuralstrength of glass decreases to about 1/10 or less of that of an idealglass surface that does not have any crack. Accordingly, it is possibleto improve the flexibility and the reliability of an active matrix typedisplay device by introducing a structure for preventing the developmentof cracks existing in the surface of a thin glass layer. In the presentinvention, the following means are employed to prevent the developmentof cracks existing in the surface of the thin glass layer contacting theadhesion layer.

First, the thickness of a surface of the thin glass layer, which isbonded to the plastic substrate, is shaped to have gentle projectionsand depressions having a height of a fiftieth or more and a half or lessof the thickness of the thin glass layer. This can be achieved by firstmechanically polishing the glass substrate, and then chemicallypolishing the surface of the glass substrate, so that the tips andbottoms of the projections and depressions are rounded. Further, due tothe above-described chemical polishing, the angled portions at the tipsof the cracks can be rounded. Subsequently, the surface of the thinglass layer to be bonded to the plastic substrate is shaped to have awaveform shape, thereby preventing the overconcentration of the tensilestress to the cracks.

Second, the thickness of the thin glass layer is adjusted so that theareas including the devices such as active elements and wiringsconstituting the active matrix become thicker, and the other areasbecome thinner. The reason for such adjustment is that the areas of theglass substrate, on which active elements constituting the active matrixare formed, receive a relatively large residual stress, resulting inthat the strength of those areas decreases. In order to solve thisproblem, the thickness of the areas including the active elements isincreased to improve the strength.

Third, a compressive stress is applied to a surface of the thin glasslayer, which is bonded to the plastic substrate. Generally, a crack ofglass develops when a tensile stress is applied to the tip thereof.Accordingly, a compressive stress is generally applied to the surface ofa glass substrate so as to prevent the development of cracks. However,since a thin glass layer is formed by polishing a device formingsubstrate, the inside area of the glass, to which the tensile stress isapplied, is exposed. Accordingly, cracks are easy to develop. Therefore,if a compressive stress is applied to the polished surface of the thinglass layer in the initial state, when the entire active matrix typedisplay device is bent so as to apply a tensile stress to the polishedsurface of the thin glass layer, it is possible to prevent thedevelopment of cracks. The compressive stress is applied by forming acompressive stress applying layer on the polished surface of the thinglass layer by the use of a material having a higher coefficient oflinear expansion than glass, and by cooling it so as to apply acompressive stress inside the surface of the thin glass layer.

Fourth, a hydroxyl group blocking layer for blocking molecules havinghydroxyl groups, such as moisture, is formed on the surface of the thinglass layer, which is to be bonded to the plastic substrate. It is knownthat hydroxyl radicals advance the development of cracks in glass. Sincethe thin glass layer of the active matrix type display device accordingto the embodiments of the present invention is formed by polishing thedevice forming substrate, which eliminates the initially appliedcompressive stress, it is possible to prevent the development of cracksin the thin glass layer by providing a layer of preventing thedevelopment of cracks between the thin glass layer and the adhesionlayer.

Fifth, a reinforcing member having a mesh structure is provided insidethe adhesion layer. Preferably, this reinforcing member is providedinside the adhesion layer directly below the areas on which the activeelements are formed. With the reinforcing member, it is possible toreinforce the thin glass layer at the portions on which the activeelements are formed, and which have a relatively large residual stressleading to the decrease in strength. Accordingly, it is possible toconsiderably improve the strength of the glass layer.

Hereinafter, the embodiments of the present invention will be describedwith reference to the accompanying drawings. It should be noted that thepresent invention is not limited to the following embodiments.

(First Embodiment)

The first embodiment of the present invention will be described below.FIGS. 1A and 1B show an active matrix type display device in thisembodiment. FIG. 1A is a plan view, and FIG. 1B is a sectional viewtaken on line A–A′ of FIG. 1A. FIGS. 2 to 6 are sectional views showingthe steps of forming an active element of the active matrix type displaydevice of this embodiment. FIGS. 7 to 10 are sectional views showing thetransfer process of the active matrix type display device of thisembodiment. It should be noted that although 2×2 devices are shown inFIG. 1A, two devices are shown in FIGS. 1B and 7–10, and one device isshown in FIGS. 2–6, actually a great number of such devices are arrangedin a two dimensional array.

In this embodiment, active elements are formed by using a glasssubstrate as a device forming substrate; the device forming substrate isfirst mechanically polished, and then chemically polished, therebymaking a thin glass layer having projections and depressions with aheight of a fiftieth or more and a half or less of the thickness of thethin glass layer; and the active matrix type display device is completedwith thus obtained thin glass layer. In other words, the strength of thethin glass layer is improved by changing the shape of the polishedsurface of the thin glass layer after being subjected to the mechanicalpolishing from a sharp shape to a rounded shape by the chemicalpolishing. Here, the height of the projections and depressions means themaximum length from a tip of a projection to a bottom of a depression.

As shown in FIGS. 1A and 1B, the active matrix type display device ofthis embodiment includes a plastic substrate 101, a thin glass layer103, which is located on the plastic substrate 101 via an adhesion layer102, an undercoat layer 104 located on the thin glass layer 103, thinfilm transistors (active elements) 105, each corresponding to a pixel,and located on the undercoat layer 104, a liquid crystal layer (opticalvalve elements) 106 located above the thin glass layer 103, and drivenby the thin film transistors 105 to display an image pixel by pixel, andan opposing substrate 108 having an opposing electrode 107 and locatedon the liquid crystal layer 106. The thin glass layer 103 hasprojections and depressions having a height of a fiftieth or more and ahalf or less of the thickness of the thin glass layer 103 on the surfaceopposing to the plastic substrate 101.

Each active element 105 includes an active layer 110, which is formedlike an island, a gate insulating layer 111 formed all over the activelayer 110, a gate electrode 112 formed on the gate insulating layer 111in a region corresponding to the active layer 110, an interlayerdielectric film 113 formed all over the gate electrode 112, and a sourceand drain electrodes 114 each connected to the active layer 110 via acontact hole formed through the gate insulating layer 111 and theinterlayer dielectric film 113. One of the source and drain electrodes114 is connected to a pixel electrode 115.

Next, a method of manufacturing an active element of the active matrixtype display device according to this embodiment will be described withreference to FIGS. 2 to 6.

First, as shown in FIG. 2, the undercoat layer 104 of silicon oxide orsilicon nitride is deposited on a non-alkali glass substrate (deviceforming substrate) 201, which has been sufficiently cleaned, through theplasma enhanced chemical vapor deposition (PECVD) method, etc., using amaterial such as silane. With the undercoat layer 104, it is possible toprevent the trace of alkali elements from seeping from the glasssubstrate 201.

Then, the active layer 110 is formed by first growing anamorphous-silicon layer through the PECVD method, etc., and theninstantaneously melting it by irradiating it with an excimer laser usingKrF, etc., to make a polycrystalline silicon layer. Then, the thusobtained polycrystalline silicon layer is isolated through theanistropic etching method using the reactive ion etching (RIE) method bythe use of a fluorine gas.

Subsequently, the gate insulating layer 111 of silicon oxide or siliconnitride is formed through the PECVD method so as to cover the activelayer 110, as shown in FIG. 3.

Next, the gate electrode 112 is formed. First, a metal layer of Mo, W,Ta, or an alloy thereof, is deposited on the gate insulating layer 111using the sputtering method, etc. A photoresist is applied to the metallayer. Then, a resist pattern is formed by using the photolithographymethod. Finally, the gate insulating layer 112, the shape of whichcorresponds to that of the active layer 110, and gate lines 202 havingpredetermined shapes are formed by selectively removing the metal layerin the areas that do not have resist patterns by soaking the workpiecein a solvent.

Then, as shown in FIG. 4, an impurity is implanted to the active layer110 so as to form a contact surface in a region to contact to a sourceand drain electrodes, which will be described layer. In this embodiment,phosphorous (P) is used as the impurity. As shown by arrows in FIG. 4,the impurity is implanted by using the gate electrode 112 as a maskthrough the ion doping method with the ion concentration of about 10²²cm⁻³. Subsequently, a thermal treatment is performed to activate theimplanted phosphorous.

Next, as shown in FIG. 5, a silicon oxide layer or a silicon nitridelayer to serve as an interlayer dielectric film 113 is grown to coverthe gate electrode 112 and the gate lines 202 through the atmospherepressure chemical vapor deposition (APCVD) method. Then, a through-holefor the source and drain electrodes to contact the active layer 110 isformed through the interlayer dielectric film 113 and the gateinsulating layer 111 through the photo-etching process.

Subsequently, as shown in FIG. 6, a metal such as Mo, Ta, W, Al, Ni,etc., or an alloy thereof, or layers thereof, is (are) deposited on theinterlayer dielectric film 113 so as to connect to the active layer 110via the through-hole. Then, a source and drain electrodes 114 and signallines 203 are formed through the same photo-etching process as that usedto form the gate electrode. One of the source and drain electrodes 114is connected to the pixel electrode 115.

In this thin film transistor and wiring forming process, a thermaltreatment at a temperature of, e.g., 500° C. or more should beperformed. Since the device forming substrate of this embodiment is anon-alkali glass substrate which is widely used to manufacture amorphoussilicon thin film transistors and polycrystalline silicon thin filmtransistors, and the thickness thereof is the same level as that used tomanufacture amorphous silicon thin film transistors and polycrystallinesilicon thin film transistors, there is no problem in manufacturing thinfilm transistors and wirings of this embodiment at such a temperature.In addition, when polycrystalline silicon thin film transistors aremanufactured, it is possible to employ the conventional fabricatingmethod.

Next, a method of manufacturing an active matrix type display device ofthis embodiment, after the active elements are formed, will be describedwith reference to FIGS. 7–10, in which the details of thin filmtransistors are omitted.

As shown in FIG. 7, the surface of the glass substrate 201, on which thethin film transistors 105 are formed, is coated, without any space, withan adhesive agent, which is superior in hydrofluoric acid properties,and the adhesion power of which is weakened if it is irradiated with anultraviolet light, so as to form a temporary adhesion layer 204.Further, a temporary substrate 205 of a fluoroplastic sheet, which ishighly resistant to hydrofluoric acid, is provided on the temporaryadhesion layer 204 so as to support to the glass substrate 201. Theadhesion surface of the temporary substrate 205 is coated so as toimprove the adhesion properties thereof with respect to an organicmaterial.

As shown in FIG. 8, the glass substrate 201 is mechanically polishedusing a polishing agent, with the level of coarseness of the polishingagent being adjusted, so that the thickness thereof becomes about 0.1mm. In this way, the glass substrate 201 becomes the thin glass layer103.

As shown in FIG. 9, after the mechanical polishing step, the entireworkpiece is soaked in a hydrofluoric acid solvent so as to chemicallypolish the workpiece. In this way, the thickness of the thin glass layer103 becomes about 30 □m. At this time, it is preferable that after thethickness of the thin glass layer 103 reaches a predetermined level,ammonia, for example, is added to the hydrofluoric acid solvent so as toadjust the etching rate.

It is preferable that the height of the projections and depressions ofthe thin glass layer is one fiftieth or more and one half or less of thethickness of the thin glass layer. If the height is less than onefifties of the thickness, the surface becomes substantially the samestate as the surface of mirror. Therefore, the effect of stressrelaxation cannot be expected. If the height is more than a half of thethickness, the internal stress of the glass is concentrated on thedepressed portions. If the height is one twenties or more and a half orless of the thickness, the contact area between the thin glass layer 103and the adhesion layer is increased, resulting in that it is possible toobtain a good adhesion properties.

It is preferable that the thickness of the thin glass layer 103 is about5 □m or more in order to maintain the strength, and about 100 □m or lessin order to keep it light. Further, in order to make the height of theprojections and depressions of the thin glass layer 103 in the range ofa fifties to a half of the thickness of the thin glass layer 103, thegrain size (coarseness) of the polishing agent such as a grind stone isadjusted to have substantially the same size as the height of theprojections and depressions to be made. For example, assuming that thethickness of the thin glass layer 103 is about 50 □m, and the height ofthe projections and depressions should be about a tenth of thethickness, a grind stone having a grain size of about 5 □m can be used.

As shown in FIG. 10, an adhesion layer 102 is formed all over the etchedsurface of the thin glass layer 103 after the thin glass layer 103 isfully cleaned. Then, a polyether sulfone (PES) film having a thicknessof about 0.1 mm serving as a plastic substrate 101 is bonded to theadhesion layer 102 using the vacuum laminating technique.

Thereafter, the workpiece is irradiated with an ultraviolet light fromthe temporary substrate 205 side, thereby weakening the adhesion powerof the temporary adhesion layer 204. Then, the intermediate substrate205, together with the adhesion layer 204, is slowly peeled to exposethe surface of the thin film transistor 105 such as the interlayerdielectric film 113. The constituent elements of the temporary adhesionlayer 204, which may remain on the workpiece, are removed through theorganic cleaning method using isopropanol, etc. Although the interlayerdielectric film 113 is exposed in this embodiment, the present inventionis not limited to such a structure. For example, a protection layer of anovolac resin can be provided between the thin film transistors 105 andthe temporary adhesion layer 204 so as to protect the thin filmtransistors 105. The scope of the selection of the material of thetemporary adhesion layer 204 can be expanded by providing a protectionlayer.

Thereafter, the completed active matrix substrate and the opposingsubstrate 108, on which the opposing electrode 107 is formed, arecombined to form a cell. Then, liquid crystal is injected therein toform the liquid crystal layer 106. Subsequently, the workpiece is sealedto complete the active-matrix type display device of this embodiment.

Next, the glass substrate polishing step in the method of manufacturingan active matrix type display device in this embodiment will bedescribed below.

In this embodiment, both the mechanical polishing step and the chemicalpolishing step are employed in the glass substrate polishing step. FIG.11 schematically shows the thin glass layer 103 after being subjected tothe mechanical polishing step, and FIG. 12 schematically shows the thinglass layer 103 after being subjected to the chemical polishing stepthat follows the mechanical polishing step. In the drawings, the lowerside is the polished side. As shown in FIG. 11, there are a lot of sharpcracks 301 on the polished surface of the thin glass layer 103 afterbeing subjected to the mechanical polishing step. Such cracks are formedby the polishing agent used in the mechanical polishing. Normally, thecoarseness of the polishing agent is changed from the coarse to fine,e.g., #500, #1,000, #3,000, . . . in order to improve the smoothness ofthe polished surface. However, if a long time is taken to perform themechanical polishing in such a manner, the productivity is deteriorated.In addition, it is difficult to know the status of the cracks and flowson the side opposite to the side on which the thin film transistors areformed. Accordingly, it is possible that a crack which may deterioratethe strength of the glass may be left.

Accordingly, in this embodiment, a chemical polishing is performed onthe workpiece as shown in FIG. 11 to form a wavy structure as shown inFIG. 12, with the projections and depressions 302 having a height of afifth or more and a half or less of the thickness of the thin glasslayer 103. The wavy structure does not include any sharp edge. Thus,according to this embodiment, it is possible to obtain a strong thinglass layer without spending a long time for the mechanical polishing.

FIGS. 13–15 schematically shows the case where the thin glass layerafter being subjected to the mechanical polishing has cracks. In thedrawings, the lower side is the polished side. If there is a crack 301developed from a flaw, which has not removed during the polishing of thethin glass layer 103, or which has been caused during the subsequentstep, as shown in FIG. 13, the strength of the thin glass layer 103 maybe weakened due to the existence of the crack 301.

If the entire display device (not shown) including the thin glass layer103 is bent in the direction shown by solid line arrows in FIG. 14, acompressive stress is applied to the polished surface of the thin glasslayer 103, while a tensile stress is applied to the surface opposing tothe polished surface. Since a compressive stress in the direction ofbroken line arrows is applied to the crack 301, the crack 301 does notdevelop further.

However, if the entire display device (not shown) is bent in thedirection shown by solid line arrows in FIG. 15, a tensile stress isapplied to the polished surface of the thin glass layer 103, while acompressive stress is applied to the surface opposing to the polishedsurface. Accordingly, a tensile stress is intensively applied to the tipof the crack 301 as shown by broken line arrows. The flatter thepolished surface of the thin glass layer is, and the fewer the number ofcracks is, i.e., the better the fabrication condition is, the moreintensively the stress is applied to the tips of the few cracks, therebyeasily damaging the glass.

In the case where the wavy structure according to this embodiment isemployed in the polished surface of the thin glass layer, regardless ofthe direction in which the entire display device including the thinglass layer is bent, the possibility of causing damage thereto is low.The reason is that there is no crack having a sharp tip because of thesufficient chemical polishing, which makes the tips of the cracksrounded.

In this embodiment, a projection and a depression relax stress in theopposite directions. That is, as shown in FIG. 16, if the entire displaydevice (not shown) is bent in the direction shown by solid line arrows,by which a tensile stress is applied to the entire polished surface ofthe thin glass layer having the projections and depressions, a tensilestress is applied to each projection, and a compressive stress isapplied to each depression. On the contrary, if the entire displaydevice (not shown) is bent in the direction shown by solid line arrowsof FIG. 17, a compressive stress is applied to each projection, and atensile stress is applied to each depression. Accordingly, as a whole,the stresses are relaxed.

Further, as schematically shown in FIG. 18, even if cracks 301 aredeveloped from flaws made during the manufacturing process after thethin glass layer 103 is shaped to have the projections and depressionthrough the mechanical polishing step and the chemical polishing step,the stress intensively applied to the tip of each crack 301 is limitedto the range of one projection and depression (as shown by an arrow inFIG. 18). Accordingly, the degree of such an intensively applied stressis considerably reduced as compared with that of the conventionaldevice. Thus, the breaking strength of the thin glass layer 103 can beconsiderably increased.

Although a PES film is used as the plastic substrate in this embodiment,the material of the plastic substrate is not limited thereto, but otherkinds of plastic substrate can be used. For example, a polyethyleneterephthalate (PET) regin film having a thickness of about 0.1 mm can beused. Furthermore, a polyethylene naphthalate (PEN) resin, a polyolefinresin such as a polycarbonate (PC), a cycloolefin polymer, etc., anacrylic resin, a liquid crystal polymer, a reinforced plastic includingan inorganic material, a polyimide, etc. can also be used.

(Second Embodiment)

Next, the second embodiment of the present invention will be describedbelow. FIG. 19 is a sectional view showing an active matrix type displaydevice according to this embodiment. FIGS. 20 to 23 are sectional viewsshowing steps of a method of manufacturing the active matrix typedisplay device of this embodiment. Although two devices are shown inFIG. 19, and one device is shown in FIGS. 20 to 23, in the actualdevice, a great number of such devices are arranged in a two-dimensionalarray. With respect to this embodiment, only the features different fromthose of the first embodiment will be described below, and thedescriptions of the same features will be omitted.

In this embodiment, active matrix devices are formed on a glasssubstrate serving as a device forming substrate, and then, the thicknessof the device forming substrate is reduced to make a thin glass layer.At this time, the thickness of the areas corresponding to at least theactive elements is made thicker, and the thickness of the other areas ismade thinner. In an active matrix type display device having a deviceforming substrate, on which active elements, e.g., thin filmtransistors, are formed, multiple layers of thin films are formed in theareas where the thin film transistors are formed. Accordingly, suchareas are considered to locally receive a large stress as compared withother areas, e.g., the pixel areas, which do not have thin filmtransistors and wirings. Therefore, from the mechanical viewpoint suchas reinforcement of strength, it is preferable that the thickness of thethin glass layer is made thicker in the areas where the thin filmtransistors and wirings are formed, as compared with the other areas.Furthermore, it is also preferable that the thin glass layer serving asa block layer for blocking moisture, etc., is relatively thick so as tomaintain the chemical stability of the active layers of the thin filmtransistors.

As shown in FIG. 19, the active matrix type display device of thisembodiment is substantially the same as that of the first embodiment,except that the projections and depressions of the thin glass layer 103are made thicker in a thin glass portion 401 corresponding to the thinfilm transistors 105 and the wirings, and are made thinner in a thinglass portion 402 corresponding to the other areas.

Next, a method of manufacturing an active matrix type display device inthis embodiment will be described with reference to FIGS. 20 to 23.Since the method of manufacturing an active element is the same as thatin the first embodiment, the descriptions thereof are omitted.

As shown in FIG. 20, a positive type resist 403 of, e.g., a novolacresin, having a thickness of about 5 □m is evenly applied to the backsurface of the glass substrate 201, on which the thin film transistor105 is formed. Then, the workpiece is exposed to a light emitted fromthe side of the thin film transistor 105, with a light intensity beingsufficient to pattern the positive type resist 403.

As shown in FIG. 21, a pattern, in which only the masked resist 403 isleft, is formed using the thin film transistor 105 and the wirings (notshown) as masks, through the developing method. At this time, the bakingtemperature can be relatively low, about 100° C., so that the resist 403is dissolved or peeled when the workpiece is soaked in a hydrofluoricacid solvent later.

As shown in FIG. 22, an adhesive agent, which is superior in theresistance to hydrofluoric acid, and the adhesion power of which isweakened when it is irradiated with an ultraviolet light, is coated,without any space, over the surface of the glass substrate 201 (shown inFIG. 21), which is not the side of the resist pattern 403 (shown in FIG.21). The coated adhesive agent serves as a temporary bonding agent 204.A temporary substrate 205 of a fluoroplastic sheet, which is highlyresistant to hydrofluoric acid, is provided on the temporary adhesionlayer 204 so as to support to the glass substrate 201. The surface ofthe temporary substrate 205 at the side of the temporary adhesion layer204 is coated so as to improve the adhesion properties with respect toan organic material. Then, the entire workpiece is soaked in ahydrofluoric acid solvent so that the thickness of the glass substrate201 becomes about 30 □m, to obtain a thin glass layer 103. At this time,it is preferable that after the thickness of the glass substrate 201reaches a predetermined level, ammonia, for example, is added to thehydrofluoric acid solvent so as to adjust the etching rate. Since thepatterned resist 403 does not have a sufficient resistance tohydrofluoric acid, it is peeled off a little time after the workpiece issoaked in the hydrofluoric acid solvent. In this way, the thickness ofthe thin glass portion 401 of the thin glass layer 103 corresponding tothe thin film transistor 105 becomes relatively thick, i.e., about 50□m, and the thickness of the thin glass portion 402 corresponding to theother areas becomes relatively thin, i.e., about 25 □m.

As shown in FIG. 23, an adhesion layer 102 is formed all over the etchedsurface of the thin glass layer 103 after the thin glass layer 103 isfully cleaned. Then, a polyether sulfone resin (PES) film having athickness of about 0.1 mm serving as a plastic substrate 101 is bondedto the adhesion layer 102 using the vacuum laminating technique.

Thereafter, the active matrix type display device of this embodiment iscompleted in the same manner as the first embodiment.

In this embodiment, the thickness of the thin glass layer is madethicker in the areas protected by the resist, corresponding to the thinfilm transistors and the wirings. This can be performed in aself-aligned manner since the start of the etching process is delayed atthese areas due to the existence of the resist. Further, in thisembodiment, it is possible to make a smooth wavy structure having thecycle unit of a thin film transistor and a wiring portion. The reasonfor this is that the projections and depressions of the thin glass layerare formed with the help of the resist in the initial stage of theetching of the glass substrate. As the etching process proceeds, theboundaries between the projections and the depressions are made smooth.For this reason, the effect of the projections and depressions explainedin the descriptions of the first embodiment can also be obtained forthis embodiment. In this embodiment, the cross-sectional shape of thethicker portions of the thin glass layer can be rounded square, roundedrectangular, trapezoid, etc. Further, the size of the projections is notnecessarily the same as the size of the device portion or the wiringportion, but can be larger or smaller.

In this embodiment, the etching selectivity is based on the soft bakingof the resist. However, the etching method is not limited thereto. Forexample, if the residue of the resist may cause a problem, a hard-bakingof the patterned resist at a temperature of 140° C. is performed with acertain degree of hydrofluoric acid-resistant properties being left.Then, the glass substrate is etched for a few tens of □m using ahydrofluoric acid solvent containing ammonium, which can reduce theeffect on the resist, then the resist is peeled off, and then a furtheretching of the glass substrate is performed, thereby obtaining the samestructure.

Furthermore, in this embodiment, the exposure step is performed afterthe formation of the thin film transistor portion and the wiring portionincluding the signal lines and the gate lines, and the exposure isperformed from the side where the thin film transistors and wirings areformed. Accordingly, the thickness of the thin glass layer in the areasincluding all of such thin film transistors and wirings is made thicker.However, the present invention is not limited thereto. For example, inthe case where the active matrix type display device should be moreflexible in the direction of the signal lines, if the thin glass layeris thick in the areas directly below the signal lines, the requiredflexibility of the device is inhibited. In such a case, it is possibleto form a resist pattern on the backside of the glass substrate beforethe formation of the signal lines. Similarly, it is possible to make thethin glass layer thicker in the areas corresponding only to the thinfilm transistors. It is preferable that the difference between thethickness of the thicker areas and the thickness of the thinner area ofthe thin glass layer is about a fifth or more and a half or less of thethickness of the thicker areas. The reason for this is the same as thatexplained in the descriptions of the first embodiment.

Furthermore, in accordance with the periodicity of the wavy structureand the characteristics of the display device, it is possible to performthe exposure step using masks when the backside pattern is formed, as inthe case of an ordinary photoetching step, to form a predeterminedpattern. Further, it is possible to perform the exposure step on theresist using masks as in the case of the ordinary photoetching step inorder to form the projections and depressions in the process of forminga thin glass layer having projections and depressions with a height of afifth or more and a half or less of the thickness of the thin glasslayer, as mentioned in the descriptions of the first embodiment.

(Third Embodiment)

Next, the third embodiment of the present invention will be describedbelow. FIG. 24 is a sectional view showing an active matrix type displaydevice of this embodiment. FIGS. 27 to 29 are sectional views showingthe steps of a method of manufacturing the active matrix type displaydevice according to this embodiment. Although only two devices are shownin FIGS. 26 to 29, actually there are a great number of such devicesarranged in a two-dimensional array. The details of the thin filmtransistors are not shown. With respect to this embodiment, only thedifference between this embodiment and the first embodiment will bedescribed, and the descriptions on the same features will be omitted.

In this embodiment, active elements are formed on a glass substrateserving as a device forming substrate. Then, the thickness of the deviceforming substrate is decreased to form a thin glass layer. Subsequently,a compressive stress applying layer is formed on the polished surface ofthe thin glass layer using a material having a larger coefficient oflinear expansion than the glass. Then, the compressive stress applyinglayer is cooled to apply a compressive stress on the polished surface ofthe thin glass layer.

In many cases, a compressive stress is applied on both sides of a glasssubstrate, as shown in FIG. 25. The reason for this is that thedevelopment of a crack, which may lead to the breaking of glass, iscaused by a tensile stress applied to the tip of the crack. Such acompressive stress is applied to a non-alkali glass substrate which isnormally used in an active matrix type display device. When thin filmtransistors 105, etc. are formed on a glass substrate and the thicknessof the glass substrate is decreased to form a thin glass layer 103 asshown in FIG. 26, a compressive stress is applied to a side of the thinglass layer 103 on which the thin film transistors 105 are formed.However, since the thickness of the glass substrate has been decreased,a tensile stress is applied to a side of the thin glass layer 103opposite to the side on which the thin film transistors 105 are formed.Accordingly, if a crack exists on this side, it receives a tensilestress from the initial stage. If a further tensile stress is applied tothis portion by, e.g., bending the entire display device, the tip of thecrack easily receives a considerable level of tensile stress.

In order to solve this problem, the mechanical strength of the thinglass layer can be improved by forming a compressive stress applyinglayer on the surface of the thin glass layer opposite to the surface onwhich the thin film transistors are formed. Although it is possible toapply a certain degree of compressive stress to that surface by theadhesion layer for bonding the thin glass layer and the plasticsubstrate, it is not possible to apply a great deal of compressivestress in this way. With the structure of this embodiment, even if asoft material such as an epoxy adhesive is used as the adhesion layer,it is possible to apply a compressive stress to the thin glass layerwithout being relaxed by the adhesion layer. In this case, thecompressive stress applying layer should have a coefficient of linearexpansion greater than the glass substrate, and should be cooled afterthe formation thereof to apply a compressive stress to the thin glasslayer by the shrinkage of the compressive stress applying layer.

Next, a method of manufacturing the active matrix type display deviceaccording to this embodiment will be described with reference to FIGS.27 to 29. Since the method of forming active elements in this embodimentis the same as that in the first embodiment, the descriptions thereofare omitted. In this embodiment, the display device is a reflection typeliquid crystal display device, and the compressive stress applying layercan also serve as a reflection layer.

As shown in FIG. 27, a surface of the glass substrate 201, on which thethin film transistors 105 are formed, is coated with an adhesive agent,which is superior in the resistance to hydrofluoric acid, and theadhesion power of which is weakened if it is irradiated with anultraviolet light, so as to form a temporary adhesion layer 204.Further, a temporary substrate 205 of a fluoroplastic sheet, which ishighly resistant to hydrofluoric acid, is provided on the temporaryadhesion layer 204 so as to oppose to the glass substrate 201. Theadhesion surface of the intermediate substrate 205 is coated so as toimprove the adhesion properties with respect to an organic material.

As shown in FIG. 28, the glass substrate 201 is mechanically polishedusing a polishing agent, with the level of coarseness of the polishingagent being adjusted, so that the thickness thereof becomes about 0.1 mmto form the thin glass layer 103. Thereafter, the entire workpiece issoaked in a hydrofluoric acid solvent so that the thin glass layer 103is dissolved until the thickness thereof becomes about 30 □m. It ispreferable that when the thickness of the glass substrate reaches acertain level, ammonia etc. is added to the hydrofluoric acid solvent inorder to adjust the etching rate. Subsequently, the workpiece issufficiently cleaned. Then, aluminum (Al) is grown on a surface of thethin glass layer 103, on which the thin film transistors 105 are notformed, i.e., the etched surface, through the sputtering method untilthe thickness thereof becomes about 100 nm. This aluminum layer servesas a compressive stress applying layer 501. At this time, the substratetemperature is set to be at 100° C.

Then, an adhesion layer 102 is formed all over the compressive stressapplying layer 501 using an adhesive agent superior in the adhesionproperties. Subsequently, a polyether sulfone resin (PES) film having athickness of about 0.1 mm and serving as the plastic substrate 101 isbonded to the adhesion layer 102 using the vacuum laminating technique.At this time, the temperature is maintained to be about 100° C.

Then, as shown in FIG. 29, the temperature is lowered to an ambienttemperature (e.g., 23° C.) at a temperature lowering rate of about 10°C./min. Normally, there is over an order of magnitude difference betweenthe coefficient of linear expansion of glass and that of aluminum. Forexample, for many glass substrates, the coefficient of linear expansionis on the order of 10⁻⁷/° C., while the coefficient of linear expansionof aluminum is on the order of 2×10⁻⁵/° C. Accordingly, as shown byarrows in FIG. 29, in the temperature lowering process performed afterthe formation of the compressive stress applying layer 501, acompressive stress is applied to the thin glass layer 103 from the sideof the compressive stress applying layer since the compressive stressapplying layer 501 shrinks in the temperature lowering process, whilethe thin glass layer 103 does not shrink very much.

Thereafter, the active matrix type display device according to thisembodiment is completed in the same manner as the first embodiment.

In this embodiment, a phenomenon may occur that the entire active matrixsubstrate is warped due to the stress relaxation during the temperaturelowering process which is performed after the thin glass layer and theplastic substrate are bonded. It is possible to prevent this phenomenonby inserting the active matrix substrate between two glass substrateseach having a thickness of about 1.1 mm, and having a smooth surfaces,and then lowering the temperature.

Further, in this embodiment, it is possible to prevent the generation atensile stress that may develop a crack even at the backside of the thinglass layer, on which no compressive stress has been applied, by forminga compressive stress applying layer on the surface of the thin glasslayer contacting the adhesion layer.

Since the display device in this embodiment is a reflection type liquidcrystal display device, aluminum is used to form the compressive stressapplying layer. However, the material of the compressive stress applyinglayer is not limited to aluminum, but any material having a largercoefficient of linear expansion than glass, such as silver, molybdenum,copper, an alloy including any of aluminum, silver, molybdenum, andcopper, can be used. Further, the deposition method is not limited tothe sputtering method, but can be the chemical deposition method, etc.It should be noted, however, that since a compressive stress caused bythe difference between coefficients of linear expansion should beapplied to the surface of the thin glass layer, the selected depositionmethod should allow a heat treatment at a temperature of, e.g., about150° C., which may not cause damage to the thin glass layer. Moreover,although a metal material, which does not have light transmissionproperties, is used as the material of the compressive stress applyinglayer in this embodiment, there is a case where a light transparentmaterial should be used, as in the case of a transparent liquid crystaldisplay device. The present invention can be employed even in such acase by depositing a glass material having a larger coefficient oflinear expansion than the thin glass layer by using, e.g., the RFsputtering method. For example, if an alumino-boro silicate glassmaterial is used to form a device forming substrate, a lead glass usinglead-potassium-sodium silicate or soda-lime glass having a largecoefficient of linear expansion can be used as the compressive stressapplying layer. Since there is no high-temperature processing orchemical processing after the formation of the compressive stressapplying layer, there is no problem even if a lead glass or a soda limeglass, which does not have good heatproof or chemical-proof properties,is used.

(Fourth Embodiment)

Next, the fourth embodiment of the present invention will be described.FIG. 30 is a sectional view showing an active matrix type display deviceof this embodiment. Although only two devices are shown in FIG. 30,actually there are a great number of such devices arranged in atwo-dimensional array. Further, the details of the active elements areomitted. With respect to this embodiment, only the features that thefirst embodiment does not have will be described, and the descriptionsof the same features will be omitted.

In this embodiment, there is provided a hydroxyl group blocking layerfor blocking the soakage of molecules having hydroxyl groups, whichexist on the surface of the thin glass layer at the adhesion layer sidebonded to the plastic substrate, and may help the development of cracks.As mentioned in the descriptions of the first embodiment, there isprovided on the active element side of the thin glass layer an undercoatlayer such as a silicon oxide layer for preventing the trace of alkalielements etc. from seeping from the glass substrate. This undercoatlayer also works to prevent the soakage of molecules having hydroxylradicals from the active element side. However, on the surface of thepolished surface of the thin glass layer, there is no such layer toprevent the soakage of molecules having hydroxyl radicals into cracksexisting. Accordingly, molecules having hydroxyl groups contained in themoisture in the atmosphere air or the adhesion layer may easily reachthe tips of cracks, thereby advancing the development of the cracks,which may lead to the breaking of the glass. Accordingly, if a layer forpreventing the soakage of molecules having hydroxyl groups into thepolished surface of the thin glass layer is employed, the strength ofthe glass layer may be considerably improved.

As shown in FIG. 30, the active matrix type display device of thisembodiment does not have projections and depressions on the thin glasslayer 103, as in the case of the first embodiment. Alternatively, thereis provided a hydroxyl group blocking layer 601 between the thin glasslayer 103 and the adhesion layer 102.

A method of manufacturing an active matrix type display device accordingto this embodiment differs from the first embodiment in that after thethickness of the glass substrate is decreased to form the thin glasslayer 103, no projection nor depression is formed thereon, unlike thefirst embodiment, but a hydroxyl group blocking layer 601 is formed byapplying a silane coupling agent such asdichlorohydroxypropyltrimetylsilane to the polished surface of theglass, and heat-treating the workpiece at a relatively low temperature,such as 70° C., for about an hour. FIG. 31 shows a chemical formula thatcan be applied to the silane coupling agent of this embodiment.

Since the hydroxyl group blocking layer 601 is provided on the thinglass layer 103, oxygen atoms and hydrogen atoms of the silane couplingagent form hydrogen bonds in the hydroxyl group blocking layer 601provided at the polished surface side of the thin glass layer 103.Accordingly, there exist alkyl groups on the surface of the hydroxylgroup blocking layer 601, which prevent the soakage of molecules havinghydroxyl groups.

The material of the hydroxyl group blocking layer 601 can be a silanecoupling agent, preferably a material including at least one of3-glycidoxylpropyl-trimethoxysilane,3-[(methacryloyloxy)propyl]-trimethoxysilan,N-[3-(trimethoxysilyl)propyl]-ethlenediamine, and3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluoroctyl-trimethoxysilane

Further, not only an organic material such as a silane coupling agentbut also an inorganic material can be used to form the hydroxyl groupblocking agent 601. For example, it is possible to apply polysilazanedissolved in xylene to the polished surface of the thin glass layer 103by the spin coating method, and to heat treat the workpiece in theatmosphere air at a temperature of 200° C. for about three hours,thereby forming a silicon oxide layer having a thickness of about 100 nmon the surface of the thin glass layer 103. The silicon oxide layer thusformed can serve as a layer for preventing hydroxyl groups from reachingthe polished glass surface. Further, since the spin coating method isused in the deposition step, cracks and flaws, if any, of the polishedglass surface can be protected.

(Fifth Embodiment)

Next, the fifth embodiment of the present invention will be describedbelow. FIG. 32 shows a sectional view of an active matrix type displaydevice according to this embodiment. Although only two devices are shownin FIG. 32, actually there are a great number of such devices arrangedin a two-dimensional array. Further, the details of active elements areomitted. With respect to this embodiment, only the features which aredifferent from the feature of the first embodiment will be described,and the descriptions of the same features will be omitted.

In this embodiment, a reinforcing member 701 having a mesh structure isprovided in the adhesion layer 102. It is preferable that thereinforcing member 701 is provided directly below the active element 105in the adhesion layer 102. In this way, it is possible to reinforce thethin glass layer 103 in the area where the active element 105 is formed,which has a relatively large residual stress, and thus is relativelyweakened. Accordingly, it is possible to considerably improve thestrength of the thin glass layer 103.

As shown in FIG. 32, the active matrix type display device of thisembodiment does not include projections and depressions on the thinglass layer 103, unlike the first embodiment, but does include areinforcing member 701 having a mesh structure in the adhesion layer102.

The above-described embodiments can be combined to gain combinedeffects. For example, as the result of the combination of the first andthird embodiments, it is possible to further improve the strength of thepolished glass layer by the effect of having projections and depressionsin the first embodiment, and the effect of preventing the entry ofmolecules having hydroxyl groups of the third embodiment. Thecombination is not limited to the first and third embodiments, but anycombination of the above-described embodiments is possible.

Although the cases of a liquid crystal display device have beendescribed relating to the above-described embodiments, the presentinvention is not limited to liquid crystal display devices, but can beapplied to any devices requiring matrix driving. For example, thepresent invention can be applied to a self-luminance type display devicesuch as an organic electroluminescence display, a display usingelectrophoresis devices. Further, if liquid crystal is used, theopposing electrode can be eliminated, a pair of comb-shaped pixelelectrodes can be provided at the device circuit regions side, and anelectric filed can be applied in the direction of display in order todrive the liquid crystal. If organic electroluminescence is used for thedisplay, it is preferable that a peripheral driver circuit of currentdriving type is provided, and a pixel includes a selection switchcomposed of two to six transistors, a current supply purpose drivingtransistor, and a transistor property fluctuation correction circuit.These circuits can be conventionally-used circuits. Further, a pluralityof thin film transistors can be used as active elements.

As described in detail, according to the present invention, even if aglass substrate is used as a device forming substrate, it is possible toprovide an active matrix type display device, which is reliable andflexible as a whole, and a method of manufacturing the same.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventiveconcepts as defined by the appended claims and their equivalents.

1. An active matrix type display device comprising: a first substrate,which is flexible; a thin glass layer provided on the first substratevia an adhesion layer, and having projections and depressions on asurface thereof opposing to the first substrate, the projections anddepressions having rounded tips and bottoms; active elements provided onthe thin glass layer, each active element corresponding to a pixel; adisplay provided above the thin glass layer, and driven by the activeelements to display an image pixel by pixel; and a second substrateprovided on the display, and having an opposing electrode formedthereon.
 2. The active matrix type display device according to claim 1,wherein a height of the projections and depressions is a fiftieth ormore and a half or less of a thickness of the thin glass layer.
 3. Theactive matrix type display device according to claim 1, wherein thefirst substrate is formed of a plastic.